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FAIRCHILD SEMICONDUCTOR  HGTG30N60B3  IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG30N60B3
Technical Data Sheet (365.91KB) EN See all Technical Docs

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Product Overview

The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
  • Short-circuit rating
  • 1.45V @ IC = 30A Low saturation voltage
  • 90ns Fall time @ TJ = 150°C
  • 208W Total power dissipation @ TC = 25°C

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
1.45V
Power Dissipation Pd:
208W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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