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HGTG30N60B3
IGBT, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
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ManufacturerONSEMI
Manufacturer Part NoHGTG30N60B3
Newark Part No.58K1591
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTG30N60B3
Newark Part No.58K1591
Technical Datasheet
Continuous Collector Current60A
DC Collector Current60A
Collector Emitter Saturation Voltage1.45V
Collector Emitter Saturation Voltage Vce(on)1.45V
Power Dissipation208W
Power Dissipation Pd208W
Collector Emitter Voltage V(br)ceo600V
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
- Short-circuit rating
- 1.45V @ IC = 30A Low saturation voltage
- 90ns Fall time @ TJ = 150°C
- 208W Total power dissipation @ TC = 25°C
Applications
Power Management, Alternative Energy
Technical Specifications
Continuous Collector Current
60A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation
208W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
DC Collector Current
60A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation Pd
208W
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability