HGTG30N60B3 - 

IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

HGTG30N60B3 - IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

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Product Overview

The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
  • Short-circuit rating
  • 1.45V @ IC = 30A Low saturation voltage
  • 90ns Fall time @ TJ = 150°C
  • 208W Total power dissipation @ TC = 25°C


Power Management, Alternative Energy


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