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FQP20N06L
Power MOSFET, N Channel, 60 V, 21 A, 42 mohm, TO-220AB, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP20N06LCopy
Newark Part No.31Y1550
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id21A
On Resistance Rds(on)0.042ohm
Drain Source On State Resistance42mohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd53W
Gate Source Threshold Voltage Max2.5V
Power Dissipation53W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (17-Jan-2022)
Product Overview
The FQP20N06L is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% Avalanche tested
- 9.5nC Typical low gate charge
- 35pF Typical low Crss
Applications
Power Management, Motor Drive & Control, Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.042ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
42mohm
Transistor Mounting
Through Hole
Power Dissipation Pd
53W
Power Dissipation
53W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate