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FDY4000CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 600 mA, 600 mA, 0.7 ohm
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDY4000CZ
Newark Part No.20M1188
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id600mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel600mA
Continuous Drain Current Id P Channel600mA
Drain Source On State Resistance N Channel0.7ohm
Drain Source On State Resistance P Channel0.7ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel625mW
Power Dissipation P Channel625mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
600mA
Drain Source On State Resistance P Channel
0.7ohm
No. of Pins
6Pins
Power Dissipation P Channel
625mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
600mA
Drain Source On State Resistance N Channel
0.7ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
625mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate