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FAIRCHILD SEMICONDUCTOR  FDS3572  MOSFET Transistor, N Channel, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR FDS3572
Technical Data Sheet (632.23KB) EN See all Technical Docs

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Product Overview

The FDS3572 is a N-channel MOSFET produced using Fairchild Semiconductor‘s PowerTrench® process. It is suitable for use in primary switch for isolated DC-to-DC converters, high voltage synchronous rectifier for DC bus converters, distributed power and intermediate bus architectures.
  • Low miller charge
  • Low QRR body diode
  • Optimized efficiency at high frequencies
  • UIS Capability (single pulse and repetitive pulse)

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8.9A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.014ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V

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