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FAIRCHILD SEMICONDUCTOR  FDD10AN06A0  MOSFET Transistor, N Channel, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR FDD10AN06A0
Technical Data Sheet (599.84KB) EN See all Technical Docs

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Product Overview

The FDD10AN06A0 is a N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher reliability and system efficiency.
  • Low miller charge
  • Low Qrr body diode
  • UIS Capability (single pulse and repetitive pulse)

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
50A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0094ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
135W
Transistor Case Style:
TO-252AA
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex
Authorized Distributor

Substitutes

FDD10AN06A0

MOSFET

FAIRCHILD SEMICONDUCTOR

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MOSFET Transistor, N Channel, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR

1,463:  in stock

Price for: Each (Supplied on Cut Tape)

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