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DIODES INC.  MMBT3906-7-F  Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 300 mW, -200 mA, 100 hFE

DIODES INC. MMBT3906-7-F
Technical Data Sheet (295.96KB) EN See all Technical Docs

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Product Overview

The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MMBT3904. The transistor is ideal for medium power amplification and switching.
  • Epitaxial planar die construction
  • Halogen and antimony-free
  • Green device
  • Qualified to AEC-Q101 standards for high reliability

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
300mW
DC Collector Current:
-200mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Defence, Military & Aerospace;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Substitutes

Associated Products

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