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BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 ohm
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ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Newark Part No.
Full Reel86AK4578
Cut Tape25R4433
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Newark Part No.
Full Reel86AK4578
Cut Tape25R4433
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id800mA
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel115mA
Drain Source On State Resistance N Channel13.5ohm
Drain Source On State Resistance P Channel13.5ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSS8402DW-7-F is a complementary pair Enhancement Mode MOSFET with matte tin finish annealed over Alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low on resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Level-1 per J-STD-020 moisture sensitivity
- Green product
- AEC-Q101 Qualified
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
115mA
Drain Source On State Resistance P Channel
13.5ohm
No. of Pins
6Pins
Power Dissipation P Channel
200mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
800mA
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
115mA
Drain Source On State Resistance N Channel
13.5ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate