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VS-50MT060WHTAPBF
IGBT Module, Dual [Half Bridge], 114 A, 3.2 V, 658 W, 150 °C, MTP
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ManufacturerVISHAY
Manufacturer Part NoVS-50MT060WHTAPBF
Newark Part No.88K8459
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-50MT060WHTAPBF
Newark Part No.88K8459
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current114A
DC Collector Current114A
Continuous Collector Current114A
Collector Emitter Saturation Voltage Vce(on)2.5V
Power Dissipation Pd658W
Power Dissipation658W
Collector Emitter Saturation Voltage3.2V
Collector Emitter Voltage Max600V
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleMTP
No. of Pins12Pins
Operating Temperature Max150°C
IGBT TerminationSolder Pin
IGBT TechnologyIGBT 4
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
114A
Collector Emitter Saturation Voltage Vce(on)
2.5V
Power Dissipation
658W
Collector Emitter Voltage Max
600V
Transistor Case Style
MTP
Operating Temperature Max
150°C
IGBT Technology
IGBT 4
Product Range
-
Continuous Collector Current
114A
Continuous Collector Current
114A
Power Dissipation Pd
658W
Collector Emitter Saturation Voltage
3.2V
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
12Pins
IGBT Termination
Solder Pin
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate