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TSML1000
Infrared Emitter, 940 nm, 12 °, 7 mW/Sr, 800 ns, 800 ns
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467 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.906 |
| 10+ | $0.632 |
| 25+ | $0.584 |
| 50+ | $0.536 |
| 100+ | $0.488 |
| 250+ | $0.453 |
| 500+ | $0.417 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSML1000
Newark Part No.33C1780
Technical Datasheet
Peak Wavelength940nm
Angle of Half Intensity12°
Diode Case Style-
Radiant Intensity (Ie)7mW/Sr
Rise Time800ns
Fall Time tf800ns
Forward Current If(AV)20mA
Forward Voltage VF Max1.2V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
Product Overview
The TSML1000 is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well (MQW) technology. It is moulded in a clear, untinted plastic package (with lens) for surface mounting (SMD). It is suitable for use in remote control, punched tape readers, encoder, photointerrupters.
- High speed
- High radiant power
- High radiant intensity
- ϕ = ±12° Angle of half intensity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Versatile terminal configurations
Technical Specifications
Peak Wavelength
940nm
Diode Case Style
-
Rise Time
800ns
Forward Current If(AV)
20mA
Operating Temperature Min
-40°C
Product Range
-
Angle of Half Intensity
12°
Radiant Intensity (Ie)
7mW/Sr
Fall Time tf
800ns
Forward Voltage VF Max
1.2V
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability