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TN2404K-T1-GE3
Power MOSFET, N Channel, 240 V, 200 mA, 4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | TN2404K-T1-GE3Copy |
| Manufacturer Standard Lead Time | 62 weeks |
| Newark Part No. | Full Reel35R0095 Cut Tape79R5407 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.396 | $1,188.00 |
| Total Price | $1,188.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 3000+ | $0.396 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.466 |
| 6000+ | $0.457 |
| 9000+ | $0.447 |
| 15000+ | $0.438 |
| 30000+ | $0.429 |
| 75000+ | $0.419 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | TN2404K-T1-GE3Copy |
| Manufacturer Standard Lead Time | 62 weeks |
| Newark Part No. | Full Reel35R0095 Cut Tape79R5407 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 240V |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 4ohm |
| On Resistance Rds(on) | 2.2ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 360mW |
| Transistor Case Style | SOT-23 |
| Gate Source Threshold Voltage Max | 800mV |
| Power Dissipation | 360mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (19-Jan-2021) |
Product Overview
The TN2404K-T1-GE3 is a 240VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers.
- Low ON-resistance
- 260V Secondary breakdown free
- Low power/voltage driven
- Low input and output leakage
- Excellent thermal stability
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
- No high-temperature “Run-away”
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 240V |
| Drain Source On State Resistance | 4ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 360mW |
| Gate Source Threshold Voltage Max | 800mV |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 200mA |
| On Resistance Rds(on) | 2.2ohm |
| Rds(on) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Power Dissipation | 360mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (19-Jan-2021) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (19-Jan-2021) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |