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SUP80090E-GE3
Power MOSFET, N Channel, 150 V, 128 A, 0.0078 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSUP80090E-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.86Y1094
Your Part Number
490 In Stock
7,500 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $4.240 |
| 10+ | $2.790 |
| 25+ | $2.520 |
| 50+ | $2.240 |
| 100+ | $1.970 |
| 250+ | $1.870 |
| 500+ | $1.770 |
Price for:Each
Minimum: 1
Multiple: 1
$4.24
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUP80090E-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.86Y1094
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id128A
Drain Source On State Resistance0.0078ohm
On Resistance Rds(on)0.0078ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd375W
Power Dissipation375W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
N-Channel 150V (D-S) MOSFET suitable for use in power supplies (uninterruptible power supplies, AC/DC switch-mode power supplies, lighting), synchronous rectification, DC/DC converter, motor drive switch, DC/AC inverter, solar micro inverter and Class D audio amplifier.
- ThunderFET® power MOSFET
- Maximum 175°C junction temperature
- 100% Rg and UIS tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0078ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation Pd
375W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
128A
On Resistance Rds(on)
0.0078ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate