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SQM40041EL_GE3
Power MOSFET, P Channel, 40 V, 120 A, 0.00283 ohm, TO-263 (D2PAK), Surface Mount
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQM40041EL_GE3
Newark Part No.38AH5936
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id120A
Drain Source On State Resistance0.00283ohm
On Resistance Rds(on)0.00283ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd157W
Gate Source Threshold Voltage Max2.5V
Power Dissipation157W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.00283ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET
Automotive Qualification Standard
AEC-Q101
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
120A
On Resistance Rds(on)
0.00283ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
157W
Power Dissipation
157W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate