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SQD40020E_GE3
Power MOSFET, N Channel, 40 V, 100 A, 0.00233 ohm, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD40020E_GE3
Newark Part No.10AH1115
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance2330µohm
On Resistance Rds(on)0.0019ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd107W
Gate Source Threshold Voltage Max3V
Power Dissipation107W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCTo Be Advised
Alternatives for SQD40020E_GE3
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2330µohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
TrenchFET
Automotive Qualification Standard
AEC-Q101
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0019ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
107W
Power Dissipation
107W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate