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SQ2318AES-T1_GE3
Power MOSFET, N Channel, 40 V, 8 A, 0.031 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQ2318AES-T1_GE3Copy
Newark Part No.49AM0106
Product RangeTrenchFET Series
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ2318AES-T1_GE3Copy
Newark Part No.49AM0106
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id8A
Drain Source On State Resistance0.031ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation3.3W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
3.3W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate