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SISS61DN-T1-GE3
MOSFET, P-CH, -20V, -111.9A, 150DEG C
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3Copy
Manufacturer Standard Lead Time49 weeks
Newark Part No.
Full Reel86AK6254
Re-Reel02AH2522RL
Cut Tape02AH2522
Product RangeTrenchFET Gen III
Your Part Number
5,790 In Stock
180,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.130 | $10.65 |
| Total Price | $10.65 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.130 |
| 10+ | $1.400 |
| 15+ | $1.290 |
| 25+ | $1.190 |
| 50+ | $1.080 |
| 125+ | $0.979 |
| 250+ | $0.959 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.644 |
| 6000+ | $0.619 |
| 9000+ | $0.594 |
| 15000+ | $0.582 |
| 30000+ | $0.570 |
| 75000+ | $0.558 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3Copy
Manufacturer Standard Lead Time49 weeks
Newark Part No.
Full Reel86AK6254
Re-Reel02AH2522RL
Cut Tape02AH2522
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id111.9A
On Resistance Rds(on)0.0029ohm
Drain Source On State Resistance3500µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd65.8W
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0029ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
65.8W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
111.9A
Drain Source On State Resistance
3500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate