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SISS52DN-T1-GE3
Power MOSFET, N Channel, 30 V, 162 A, 0.0012 ohm, PowerPAK 1212-8S, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS52DN-T1-GE3
Newark Part No.42AJ0519
Product RangeTrenchFET Gen V Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.633 |
Price for:Each
Minimum: 6000
Multiple: 3000
$3,798.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS52DN-T1-GE3
Newark Part No.42AJ0519
Product RangeTrenchFET Gen V Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id162A
Drain Source On State Resistance0.0012ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
162A
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate