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SISS10ADN-T1-GE3
MOSFET, N-CH, 40V, 109A, 150DEG C, 56.8W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS10ADN-T1-GE3
Newark Part No.99AC9589
Product RangeTrenchFET Gen IV
Your Part Number
Technical Datasheet
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.620 |
| 10+ | $1.070 |
| 25+ | $0.972 |
| 50+ | $0.873 |
| 100+ | $0.774 |
| 250+ | $0.707 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.526 |
| 6000+ | $0.512 |
| 12000+ | $0.498 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS10ADN-T1-GE3
Newark Part No.99AC9589
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id109A
On Resistance Rds(on)0.0022ohm
Drain Source On State Resistance2650µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd56.8W
Gate Source Threshold Voltage Max2.4V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0022ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
109A
Drain Source On State Resistance
2650µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
56.8W
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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