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SISA18ADN-T1-GE3
MOSFET, N-CH, 30V, 38.3A, POWERPAK 1212
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISA18ADN-T1-GE3
Newark Part No.
Re-Reel19X1956
Cut Tape19X1956
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISA18ADN-T1-GE3
Newark Part No.
Re-Reel19X1956
Cut Tape19X1956
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id38.3A
Drain Source On State Resistance7500µohm
On Resistance Rds(on)0.006ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation19.8W
Power Dissipation Pd19.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
N-channel 30V (D-S) MOSFET suitable for use in DC/DC power supplies, high current power rails in computing, telecom POL and bricks and battery protection.
- TrenchFET® Gen IV power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
7500µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
19.8W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
38.3A
On Resistance Rds(on)
0.006ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
19.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate