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SISA12ADN-T1-GE3
Power MOSFET, N Channel, 30 V, 25 A, 0.0043 ohm, PowerPAK 1212, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.092 |
| 10+ | $0.092 |
| 25+ | $0.092 |
| 50+ | $0.092 |
| 100+ | $0.092 |
| 500+ | $0.092 |
| 1000+ | $0.092 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISA12ADN-T1-GE3
Newark Part No.19X1955
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25A
Drain Source On State Resistance4300µohm
On Resistance Rds(on)0.0032ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation28W
Power Dissipation Pd28W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
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Product Overview
N-channel 30V (D-S) MOSFET suitable for use in switch mode power supplies, personal computers and servers, telecom bricks and VRM’s and POL.
- TrenchFET® Gen IV Power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4300µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
28W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.0032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate