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SIS415DNT-T1-GE3
MOSFET, P-CH, 20V, 35A, POWERPAK 1212-8S
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS415DNT-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel67X6833
Re-Reel57AJ0412RL
Cut Tape57AJ0412
Product RangeTrenchFET Gen III
Your Part Number
1 In Stock
6,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.510 | $1.51 |
| Total Price | $1.51 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.510 |
| 50+ | $0.766 |
| 100+ | $0.693 |
| 250+ | $0.630 |
| 500+ | $0.566 |
| 1000+ | $0.555 |
| 2500+ | $0.543 |
| 5000+ | $0.532 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.535 |
| 9000+ | $0.527 |
| 15000+ | $0.496 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS415DNT-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel67X6833
Re-Reel57AJ0412RL
Cut Tape57AJ0412
Product RangeTrenchFET Gen III
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0033ohm
Drain Source On State Resistance4000µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
Power Dissipation Pd52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0033ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
Lead (04-Feb-2026)
Channel Type
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
4000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
52W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate