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SIRA18DP-T1-GE3
Power MOSFET, N Channel, 30 V, 33 A, 0.0075 ohm, PowerPAK SO, Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.080 |
| 10+ | $0.703 |
| 25+ | $0.631 |
| 50+ | $0.559 |
| 100+ | $0.487 |
| 500+ | $0.394 |
| 1000+ | $0.384 |
Price for:Each
Minimum: 1
Multiple: 1
$1.08
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA18DP-T1-GE3Copy
Newark Part No.19X1949
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id33A
On Resistance Rds(on)0.006ohm
Drain Source On State Resistance7500µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation14.7W
Power Dissipation Pd14.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
N-channel 30V (D-S) MOSFET suitable for use in DC/DC conversion, battery protection, load switching and DC/AC inverters.
- TrenchFET® Gen IV power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.006ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
14.7W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source On State Resistance
7500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
14.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate