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SIJA58ADP-T1-GE3
MOSFET, N-CH, 109A, 40V, POWERPAK SO
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ManufacturerVISHAY
Manufacturer Part NoSIJA58ADP-T1-GE3
Newark Part No.99AC9563
Product RangeTrenchFET Gen IV
Your Part Number
Technical Datasheet
Packaging Options
3,042 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.400 |
| 10+ | $1.000 |
| 25+ | $0.933 |
| 50+ | $0.863 |
| 100+ | $0.793 |
| 250+ | $0.725 |
| 500+ | $0.656 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.40
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIJA58ADP-T1-GE3
Newark Part No.99AC9563
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id109A
On Resistance Rds(on)0.0022ohm
Drain Source On State Resistance2650µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd56.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0022ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
56.8W
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
109A
Drain Source On State Resistance
2650µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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