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SIHP18N50C-E3
Power MOSFET, N Channel, 560 V, 18 A, 0.27 ohm, TO-220, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoSIHP18N50C-E3
Newark Part No.35R0016
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP18N50C-E3
Newark Part No.35R0016
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds560V
Continuous Drain Current Id18A
On Resistance Rds(on)0.225ohm
Drain Source On State Resistance0.27ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd223W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max5V
Power Dissipation223W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The SIHP18N50C-E3 is a 500VDS N-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low figure-of-merit (FOM) Ron x Qg
- 100% Avalanche tested
- High peak current capability
- dV/dt Ruggedness
- Improved trr/Qrr
- Improved gate charge
- High power dissipations capability
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
560V
On Resistance Rds(on)
0.225ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
223W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.27ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
223W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate