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388 In Stock
| Quantity | Price |
|---|---|
| 1+ | $4.300 |
| 10+ | $2.920 |
| 25+ | $2.700 |
| 50+ | $2.480 |
| 100+ | $2.260 |
| 500+ | $1.960 |
| 1000+ | $1.830 |
| 2500+ | $1.770 |
Price for:Each
Minimum: 1
Multiple: 1
$4.30
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHF18N50D-E3Copy
Newark Part No.63W4111
Product RangeD
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id18A
Drain Source On State Resistance0.28ohm
On Resistance Rds(on)0.23ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd39W
Power Dissipation39W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeD
Qualification-
SVHCLead (19-Jan-2021)
Product Overview
- D series N-channel enhancement-mode power MOSFET
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
- Optimal efficiency
- Fast switching
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.28ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation Pd
39W
No. of Pins
3Pins
Product Range
D
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.23ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Alternatives for SIHF18N50D-E3
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate