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SIHB6N65E-GE3
MOSFET, N-CH, 650V, 7A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIHB6N65E-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.19X1932
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.160 |
| 10+ | $2.150 |
| 100+ | $1.580 |
| 500+ | $1.260 |
| 1000+ | $1.210 |
| 2500+ | $1.190 |
| 5000+ | $1.170 |
Price for:Each
Minimum: 1
Multiple: 1
$3.16
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB6N65E-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.19X1932
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7A
Drain Source On State Resistance0.6ohm
On Resistance Rds(on)0.5ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd78W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation78W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.6ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
78W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate