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SIHB065N60E-GE3
Power MOSFET, N Channel, 600 V, 40 A, 0.065 ohm, TO-263 (D2PAK), Surface Mount
1,000 In Stock
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| Quantity | Price |
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| 1000+ | $3.400 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB065N60E-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.81AC3433
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id40A
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
E
SVHC
To Be Advised
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate