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SIE882DF-T1-GE3
Power MOSFET, N Channel, 25 V, 60 A, 0.0014 ohm, PolarPAK, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIE882DF-T1-GE3
Newark Part No.35R6190
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id60A
On Resistance Rds(on)0.0014ohm
Drain Source On State Resistance0.0014ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5.2W
Transistor Case StylePolarPAK
Gate Source Threshold Voltage Max1.7V
Power Dissipation5.2W
No. of Pins10Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.0014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.2W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
10Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.0014ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PolarPAK
Power Dissipation
5.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate