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SIDR626EP-T1-RE3
Power MOSFET, N Channel, 60 V, 227 A, 0.00174 ohm, PowerPAK SO-DC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIDR626EP-T1-RE3
Newark Part No.47AK1668
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.560 |
| 10+ | $3.160 |
| 50+ | $2.840 |
| 100+ | $2.710 |
| 500+ | $1.970 |
| 1000+ | $1.960 |
| 2500+ | $1.950 |
| 5000+ | $1.930 |
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| Quantity | Price |
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| 3000+ | $1.530 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR626EP-T1-RE3
Newark Part No.47AK1668
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id227A
On Resistance Rds(on)0.00145ohm
Drain Source On State Resistance0.00174ohm
Transistor Case StylePowerPAK SO-DC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
Power Dissipation Pd150W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.00145ohm
Transistor Case Style
PowerPAK SO-DC
Rds(on) Test Voltage
10V
Power Dissipation
150W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
227A
Drain Source On State Resistance
0.00174ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
150W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate