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| Quantity | Price |
|---|---|
| 1+ | $3.840 |
| 10+ | $2.520 |
| 25+ | $2.270 |
| 50+ | $2.020 |
| 100+ | $1.760 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR622DP-T1-GE3
Newark Part No.78AC6502
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id56.7A
On Resistance Rds(on)0.0147ohm
Drain Source On State Resistance0.0177ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max4.5V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.0147ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
56.7A
Drain Source On State Resistance
0.0177ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability