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ManufacturerVISHAY
Manufacturer Part NoSIA519EDJ-T1-GE3
Newark Part No.
Full Reel86R3785
Cut Tape69W7157
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Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA519EDJ-T1-GE3
Newark Part No.
Full Reel86R3785
Cut Tape69W7157
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id4.5A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for SIA519EDJ-T1-GE3
1 Product Found
Product Overview
The SIA519EDJ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package.
- Halogen-free
- TrenchFET® power MOSFET
- Typical ESD protection
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability