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| Quantity | Price |
|---|---|
| 1+ | $0.650 |
| 10+ | $0.473 |
| 25+ | $0.424 |
| 50+ | $0.376 |
| 100+ | $0.327 |
| 250+ | $0.291 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.25
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA427ADJ-T1-GE3
Newark Part No.61AC1917
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id12A
Drain Source On State Resistance0.016ohm
On Resistance Rds(on)0.013ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Power Dissipation Pd19W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.016ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
19W
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.013ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
19W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability