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SI7898DP-T1-GE3
Power MOSFET, N Channel, 150 V, 3 A, 85 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel01AM0556
Re-Reel72R4251RL
Cut Tape72R4251
Your Part Number
12,075 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $3.170 | $15.85 |
| Total Price | $15.85 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $3.170 |
| 10+ | $2.060 |
| 15+ | $1.900 |
| 25+ | $1.740 |
| 50+ | $1.580 |
| 125+ | $1.420 |
| 250+ | $1.390 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $1.130 |
| 4000+ | $1.050 |
| 6000+ | $1.020 |
| 10000+ | $0.991 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel01AM0556
Re-Reel72R4251RL
Cut Tape72R4251
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.068ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.9W
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI7898DP-T1-GE3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.068ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
85mohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate