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ManufacturerVISHAY
Manufacturer Part NoSI7852DP-T1-E3
Newark Part No.
Full Reel29X0550
Cut Tape06J8172
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.840 | $2.84 |
| Total Price | $2.84 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 1+ | $2.840 |
| 25+ | $2.430 |
| 50+ | $2.320 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $1.670 |
| 4000+ | $1.550 |
| 8000+ | $1.450 |
| 12000+ | $1.390 |
| 20000+ | $1.370 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7852DP-T1-E3
Newark Part No.
Full Reel29X0550
Cut Tape06J8172
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id7.6A
Drain Source On State Resistance0.0165ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The SI7852DP-T1-E3 is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.6A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
