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SI7611DN-T1-GE3
Power MOSFET, P Channel, 40 V, 18 A, 0.025 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7611DN-T1-GE3
Newark Part No.69W7231
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7611DN-T1-GE3
Newark Part No.69W7231
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id18A
Drain Source On State Resistance0.025ohm
On Resistance Rds(on)0.027ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.7W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max1V
Power Dissipation3.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
The SI7611DN-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- Halogen-free
- -50 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.7W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.027ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
Power Dissipation
3.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65