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SI7115DN-T1-GE3
MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7115DN-T1-GE3
Newark Part No.97W2690
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.160 |
| 10+ | $2.170 |
| 25+ | $1.980 |
| 50+ | $1.800 |
| 100+ | $1.610 |
| 500+ | $1.380 |
| 1000+ | $1.300 |
Price for:Each
Minimum: 1
Multiple: 1
$3.16
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7115DN-T1-GE3
Newark Part No.97W2690
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id8.9A
Drain Source On State Resistance0.295ohm
On Resistance Rds(on)0.245ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd52W
Gate Source Threshold Voltage Max2V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.295ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
8.9A
On Resistance Rds(on)
0.245ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52W
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate