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SI6562CDQ-T1-GE3
MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2679
Your Part Number
1,864 In Stock
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Delivery in 4-6 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $1.630 |
| 10+ | $1.030 |
| 100+ | $0.685 |
| 500+ | $0.642 |
| 1000+ | $0.605 |
| 2500+ | $0.571 |
| 10000+ | $0.561 |
Price for:Each
Minimum: 1
Multiple: 1
$1.63
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2679
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id6.7A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel6.7A
Continuous Drain Current Id P Channel6.7A
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI6562CDQ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package. It is suitable for load switch and DC-to-DC converter applications.
- TrenchFET® power MOSFET
- 20V drain source voltage Vds P channel and 20V drain source voltage Vds N
- 6.7A continuous drain current
- 8 pin TSSOP package
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
6.7A
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
6.7A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
6.7A
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SI6562CDQ-T1-GE3
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate