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SI5935CDC-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 4 A, 4 A, 0.083 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel86R3916
Cut Tape69W7212
Product RangeTrenchFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.260 | $780.00 |
| Total Price | $780.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 3000+ | $0.260 |
| 6000+ | $0.255 |
| 9000+ | $0.249 |
| 15000+ | $0.241 |
| 30000+ | $0.232 |
| 75000+ | $0.227 |
| 150000+ | $0.223 |
| 300000+ | $0.218 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.197 |
| 9000+ | $0.186 |
| 15000+ | $0.182 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel86R3916
Cut Tape69W7212
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.083ohm
Drain Source On State Resistance P Channel0.083ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.083ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.083ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate