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SI4980DY-T1-E3
Dual MOSFET, N Channel, 80 V, 3.7 A, 0.062 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4980DY-T1-E3
Newark Part No.85W2154
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel80V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds80V
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.062ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.7A
Drain Source Voltage Vds
80V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
80V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
3.7A
Drain Source On State Resistance N Channel
0.062ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate