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SI4850EY-T1-E3
Power MOSFET, N Channel, 60 V, 8.5 A, 0.022 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Newark Part No.
Full Reel35K3477
Cut Tape06J7915
Your Part Number
Technical Datasheet
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| 1+ | $2.150 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Newark Part No.
Full Reel35K3477
Cut Tape06J7915
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.018ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.3W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation3.3W
No. of Pins8Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Alternatives for SI4850EY-T1-E3
2 Products Found
Product Overview
The SI4850EY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge (Qg).
- Fast switching
- 175°C Maximum junction temperature
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.3W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
8.5A
On Resistance Rds(on)
0.018ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
3.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability