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SI4848DY-T1-GE3
Power MOSFET, N Channel, 150 V, 2.7 A, 85 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4848DY-T1-GE3
Newark Part No.84R8061
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.760 |
| 10+ | $1.350 |
| 25+ | $1.230 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4848DY-T1-GE3
Newark Part No.84R8061
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id2.7A
On Resistance Rds(on)0.068ohm
Drain Source On State Resistance85mohm
Transistor MountingSurface Mount
Power Dissipation Pd1.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleSOIC
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The SI4848DY-T1-GE3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.068ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.7A
Drain Source On State Resistance
85mohm
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate