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SI4835DDY-T1-GE3
Power MOSFET, P Channel, 30 V, 13 A, 0.018 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4835DDY-T1-GE3
Newark Part No.
Re-Reel23T8517
Cut Tape23T8517
Your Part Number
Technical Datasheet
396 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.07 |
| 10+ | $1.40 |
| 25+ | $1.27 |
| 50+ | $1.14 |
| 100+ | $1.01 |
| 250+ | $0.92 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4835DDY-T1-GE3
Newark Part No.
Re-Reel23T8517
Cut Tape23T8517
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id13A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation5.6W
Power Dissipation Pd5.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
- P-channel 30V (D-S) MOSFET
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
- Applicable for load switches, notebook PCs and desktop PCs
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.014ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5.6W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
13A
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
5.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate