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SI4425FDY-T1-GE3
Power MOSFET, P Channel, 30 V, 18.3 A, 0.0095 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4425FDY-T1-GE3
Newark Part No.42AJ0614
Product RangeTrenchFET Gen IV Series
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4425FDY-T1-GE3
Newark Part No.42AJ0614
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18.3A
Drain Source On State Resistance0.0095ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation4.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0095ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability