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SI4413ADY-T1-E3
Power MOSFET, P Channel, 30 V, 10.5 A, 0.0075 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4413ADY-T1-E3
Newark Part No.85W2148
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4413ADY-T1-E3
Newark Part No.85W2148
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10.5A
On Resistance Rds(on)0.0063ohm
Drain Source On State Resistance0.0075ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0063ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
10.5A
Drain Source On State Resistance
0.0075ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate