Print Page
SI4288DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 9.2 A, 9.2 A, 0.0165 ohm
Image is for illustrative purposes only. Please refer to product description.
2,500 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.540 |
| 10+ | $0.984 |
| 25+ | $0.877 |
| 50+ | $0.771 |
| 100+ | $0.664 |
| 250+ | $0.595 |
| 500+ | $0.526 |
| 1000+ | $0.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.54
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4288DY-T1-GE3
Newark Part No.70AC6505
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id9.2A
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel9.2A
Continuous Drain Current Id P Channel9.2A
Drain Source On State Resistance N Channel0.0165ohm
Drain Source On State Resistance P Channel0.0165ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The SI4288DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for CCFL inverter, DC-to-DC converter and HDD applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
9.2A
Drain Source On State Resistance P Channel
0.0165ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Qualification
-
MSL
-
Continuous Drain Current Id
9.2A
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
9.2A
Drain Source On State Resistance N Channel
0.0165ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Alternatives for SI4288DY-T1-GE3
1 Product Found
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability