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SI4164DY-T1-GE3
MOSFET Transistor, N Channel, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4164DY-T1-GE3
Newark Part No.97W2646
Your Part Number
Technical Datasheet
90 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.440 |
| 10+ | $1.660 |
| 25+ | $1.510 |
| 50+ | $1.360 |
| 100+ | $1.220 |
| 500+ | $1.030 |
| 1000+ | $0.979 |
| 2500+ | $0.896 |
Price for:Each
Minimum: 1
Multiple: 1
$2.44
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4164DY-T1-GE3
Newark Part No.97W2646
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source On State Resistance3200µohm
On Resistance Rds(on)0.0026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd6W
Gate Source Threshold Voltage Max2.5V
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3200µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6W
Power Dissipation
6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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