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SI4090DY-T1-GE3
MOSFET, N-CH, 100V, 19.7A, SOIC-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4090DY-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.19X1960
Your Part Number
4,780 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.140 |
| 10+ | $1.360 |
| 100+ | $0.921 |
| 500+ | $0.732 |
| 1000+ | $0.671 |
| 2500+ | $0.612 |
| 10000+ | $0.600 |
Price for:Each
Minimum: 1
Multiple: 1
$2.14
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4090DY-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.19X1960
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id19.7A
Drain Source On State Resistance8000µohm
On Resistance Rds(on)0.008ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd7.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation7.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
8000µohm
Transistor Case Style
SOIC
Power Dissipation Pd
7.8W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19.7A
On Resistance Rds(on)
0.008ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate