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SI3590DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.062 ohm
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-E3Copy
Newark Part No.06J7626
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.062ohm
Drain Source On State Resistance P Channel0.062ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.062ohm
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.062ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate