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SI3499DV-T1-GE3
Power MOSFET, P Channel, 8 V, 7 A, 23 mohm, TSOP, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI3499DV-T1-GE3
Newark Part No.35R6214
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3499DV-T1-GE3
Newark Part No.35R6214
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id7A
Drain Source On State Resistance23mohm
On Resistance Rds(on)0.019ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.1W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max350mV
Transistor Case StyleTSOP
Power Dissipation1.1W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The SI3499DV-T1-GE3 is a 1.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- 1.5V Rated voltage
- Ultra-low ON-resistance
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
23mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOP
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.019ohm
Power Dissipation Pd
1.1W
Gate Source Threshold Voltage Max
350mV
Power Dissipation
1.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate