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SI3460DDV-T1-GE3
Power MOSFET, N Channel, 20 V, 7.9 A, 0.028 ohm, TSOP, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI3460DDV-T1-GE3Copy
Newark Part No.
Re-Reel87W5913
Cut Tape87W5913
Your Part Number
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| Packaging Type | Quantity | Unit Price: | Total |
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| Cut Tape | 1 | $0.344 | $0.34 |
| Total Price | $0.34 | ||
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| Quantity | Price |
|---|---|
| 1+ | $0.344 |
| 25+ | $0.214 |
| 50+ | $0.179 |
| 100+ | $0.144 |
| 250+ | $0.139 |
| 500+ | $0.134 |
| 1000+ | $0.122 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3460DDV-T1-GE3Copy
Newark Part No.
Re-Reel87W5913
Cut Tape87W5913
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id7.9A
Drain Source On State Resistance0.028ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.7W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The SI3460DDV-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, boost converter and DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.9A
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate