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SI3459BDV-T1-E3
Power MOSFET, P Channel, 60 V, 2.9 A, 0.288 ohm, TSOP, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3459BDV-T1-E3
Newark Part No.16P3719
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.9A
Drain Source On State Resistance0.288ohm
On Resistance Rds(on)0.288ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd2W
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max3V
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.288ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2.9A
On Resistance Rds(on)
0.288ohm
Rds(on) Test Voltage
20V
Transistor Case Style
TSOP
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate